师资队伍
左致远
作者:   时间:2019-07-26   点击数:

【个人简介】

左致远,副教授,博士生导师,2018年入选山东大学青年学者未来计划,近年来主要从事功能光电材料与器件的理论和应用研究工作,包括宽禁带半导体光电材料与器件研究、基于钙钛矿材料的光电器件研究、二维拓扑材料与器件的微观结构与特性的研究,在Journal of Physical Chemistry LettersJournal of Physical Chemistry CApplied Physics Letters等国际期刊上作为第一作者或通讯作者发表SCI论文40余篇,他引350余次。


地址:青岛市即墨区滨海公路72N7211

电话:0532-58631725

Emailzuozhiyuan@sdu.edu.cn


【学习及工作经历】

学习经历:

2007.09 - 2012.07 山东大学晶体材料研究所 博士

2003.09 - 2007.07 山东大学物理学院  学士

工作经历:

2018.09至今:山东大学光学高等研究中心 副教授

2016.12-2017.12:南洋理工大学 CINTRA 访问学者

2015.02-2018.08:山东大学光学高等研究中心 助理研究员

2013.01 - 2015.01 中山大学物理科学与工程技术学院 博士后


【主讲课程】

理论力学

研究生前沿讲座


【研究领域和兴趣】

主要从事功能光电材料与器件的教学和科研工作,包括

1. 宽禁带半导体光探测器件与光源器件

2. 基于钙钛矿材料的光电器件研究

3. 拓扑材料的物理性质及器件研究


【主要论著】

1. High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface, F Zhang, X Chen, Z Zuo, X Qin, X Xu, X Zhao, Journal of Materials Science: Materials in Electronics 29 (6), 5180-5185.

2. Anisotropic Ionic Transportation Performances of (100) and (112) Planes in MAPbI 3 Single Crystal, Z Zuo, J Ding, Y Li, Y Zhao, S Du, Materials Research Bulletin 99, 466-470.

3. Anisotropic optoelectronic performances on (112) and (100) lattice plane of perovskite MAPbI3 single crystal, J Ding, S Du, X Cheng, L Jing, Y Zhao, Z Zuo, H Cui, X Zhan, Materials Chemistry and Physics 204, 222-227.

4. Atomic force microscopy investigation of a step generation and bunching on the (100) facet of a CH3NH3PbI3 crystal, grown from γ‐Butyrolactone, J Ding, Y Zhao, Y Sun, S Du, H Cui, L Jing, X Cheng, Z Zuo, X Zhan, Crystal Research and Technology 52 (4), 1700021.

5. High Detectivity and Rapid Response in Perovskite CsPbBr3 Single-Crystal Photodetector, J Ding, S Du, Z Zuo, Y Zhao, H Cui, X Zhan, The Journal of Physical Chemistry C 121 (9), 4917-4923.

6. Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr3 Single Crystal, Z Zuo, J Ding, Y Zhao, S Du, Y Li, X Zhan, H Cui, The journal of physical chemistry letters 8 (3), 684-689.

7. High-quality inorganic–organic perovskite CH3NH3PbI3 single crystals for photo-detector applications, J Ding, S Du, Y Zhao, X Zhang, Z Zuo, H Cui, X Zhan, Y Gu, H Sun, Journal of Materials Science 52 (1), 276-284.

8. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector, Z Zhiyuan, X Wei, W Gang, X Xiangang, Journal of Semiconductors 36 (2), 024011.

9. Enhanced photoluminescence of gallium phosphide by surface plasmon resonances of metallic nanoparticles, G Lin, Q Zhang, X Lin, D Zhao, R Jia, N Gao, Z Zuo, X Xu, D Liu, RSC Advances 5 (60), 48275-48280.

10. Plasmonic GaInP solar cells with improved energy conversion efficiency, Q Zhang, D Liu, G Lin, Z Zuo, X Lin, D Zhao, R Jia, N Gao, X Xu, RSC Advances 5 (8), 6106-6110.

11. Effects of Indium-Tin Oxide Film Morphologies on Light-Output Characteristics of GaN-Based Light-Emitting Diodes, Y Shen, X Xu, Q Liu, Z Zuo, H Liu, M Zhang, X Hu, Journal of Nanoelectronics and Optoelectronics 9 (4), 549-553.

12. Surface plasmon enhanced photochemical etching of p-type GaP: a direct demonstration of wavelength selectivity, G Lin, Z Zuo, D Liu, Q Zhang, X Lin, X Xu, Physical Chemistry Chemical Physics 16 (37), 20216-20220.

13. Periodic indentation patterns fabricated on AlGaInP light emitting diodes and their effects on light extraction, X Lin, D Liu, G Lin, Q Zhang, N Gao, D Zhao, R Jia, Z Zuo, X Xu, RSC Advances 4 (108), 63143-63146.

14. Maskless Surface Patterning of AlGaInP Light-Emitting Diodes by Photochemical Laser Interference Etching, G Lin, Z Zuo, D Liu, Z Feng, Q Zhang, X Lin, X Xu, The Journal of Physical Chemistry C 117 (51), 27062-27066.

15. Resonant actuation of microcantilever by pulse wave of one-nth the resonant frequency, Z Feng, D Liu, Z Zuo, Q Yu, R Wang, X Xu, Applied Physics Letters 101 (6), 061901.

16. Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes, R Wang, D Liu, Z Zuo, Q Yu, Z Feng, X Xu, AIP Advances 2 (1), 012109.

17. Surfactantless photochemical growth of Ag nanostructures on GaN epitaxial films with controlled morphologies and their application for SERS, R Wang, D Liu, Z Zuo, Q Yu, Z Feng, H Liu, X Xu, Journal of Materials Chemistry 22 (6), 2410-2418.

18. Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer, Z Zuo, R Wang, D Liu, Q Yu, Z Feng, X Xu, Applied Physics Letters 99 (12), 121104.

19. Increasing the extraction efficiency of blue light emitting diodes via laser patterned Gapolar pGaN surface, Z Zuo, D Liu, B Zhang, J He, H Liu, X Xu, physica status solidi (a) 208 (9), 2226-2230.

20. In-plane strain states of standard and flip-chip GaN epilayers, ZY Zuo, D Liu, RJ Wang, SB Qin, H Liu, XG Xu, The European Physical Journal-Applied Physics 54 (1).

21. Electrical and photoluminescent behaviors of La (OH) 3 nanobelts doped with Ce3+ and Er3+, Z Zuo, D Liu, J Liu, H Liu, S Qin, F Zheng, Materials Chemistry and Physics 123 (2-3), 502-506.

22. (111) Twinned BaTiO 3 microcrystallites, S Qin, D Liu, F Zheng, Z Zuo, H Liu, X Xu, CrystEngComm 12 (10), 3003-3007.

23. UV-Irradiation-Enhanced Ferromagnetism in BaTiO3, S Qin, D Liu, Z Zuo, Y Sang, X Zhang, F Zheng, H Liu, XG Xu, The Journal of Physical Chemistry Letters 1 (1), 238-241.

24. Controlled Synthesis of Hydrogen Titanate− Polyaniline Composite Nanowires and Their Resistance− Temperature Characteristics, L Gai, G Du, Z Zuo, Y Wang, D Liu, H Liu, The Journal of Physical Chemistry C 113 (18), 7610-7615.


【科研项目】

近年来承担科研项目8项,主要包括国家重点研发计划“战略性先进电子材料”专项子课题任务,国家自然科学基金青年基金,山东省重点研发计划等。


【所获专利】

近年来已获授权的国家发明专利:

1. 201410299982,一种p面带有DBR反射层的反极性AlGaInP发光二极管结构。

2. 201210240470,一种光辅助LED湿法粗化设备。

3. 201410121328,一种电流扩展层带有二维光学结构的反极性AlGaInP发光二极管。

4. 201210313306,一种贴片式激光器封装结构及其在光电电路中的封装方法。

5. 201210042470,基于聚甲基丙烯酸甲酯的LED表面粗化方法。

6. 201210042400,一种降低有源区工作温度的LED结构及其制备方法。

7. 201010544701,基于激光器的SiC衬底LED大面积可控表面粗化刻蚀方法。

8. 201210313283,一种激光器植物照明灯及其制备方法。

9. 201010178809,基于激光器的LED大面积可控表面粗化及刻蚀方法。

10. 201110053215,一种金属纳米颗粒辅助实现发光二极管表面粗化的方法。


上一条:徐演平

下一条:房常峰